✦ LIBER ✦

Design considerations for 1.3 μm emission of GaInNAs/GaAs strained quantum-well lasers

✍ Scribed by Alexandropoulos, D.; Adams, M.J.

Book ID: 114455990
Publisher: The Institution of Electrical Engineers
Year: 2003
Tongue: English
Weight: 380 KB
Volume: 150
Category: Article
ISSN: 1350-2433
DOI: 10.1049/ip-opt:20030385

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Dilute nitrides and 1.3 μm GaInNAs

Dilute nitrides and 1.3 μm GaInNAs quantum well lasers on GaAs

✍ S.M. Wang; H. Zhao; G. Adolfsson; Y.Q. Wei; Q.X. Zhao; J.S. Gustavsson; M. Sadeg 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 680 KB

GaAsSb/GaAs strained structures with qua

GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm

✍ Yu. G. Sadofyev; N. Samal; B. A. Andreev; V. I. Gavrilenko; S. V. Morozov; A. G. 📂 Article 📅 2010 🏛 Springer 🌐 English ⚖ 228 KB

Optical gain of 1.3 μm GaAsSbN/GaAs quan

Optical gain of 1.3 μm GaAsSbN/GaAs quantum well lasers

✍ Park, S.H. 📂 Article 📅 2007 🏛 The Institution of Engineering and Technology 🌐 English ⚖ 238 KB

High-pressure studies of recombination m

High-pressure studies of recombination mechanisms in 1.3-μm GaInNAs quantum-well lasers

✍ Jin, S.R.; Sweeney, S.J.; Tomic, S.; Adams, A.R.; Riechert, H. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 364 KB

High-performance λ=1.3 μm InGaAsP-InP st

High-performance λ=1.3 μm InGaAsP-InP strained-layer quantum well lasers

✍ P. Thijs; T. Van Dongen; L. Tiemeijer; J. Binsma 📂 Article 📅 1994 🏛 Optical Society of America 🌐 English ⚖ 1017 KB

High-frequency performance of triple qua

High-frequency performance of triple quantum well GaInNAs/GaAs ridge waveguide lasers emitting at 1.35 μm

✍ Martinez, A.; Sallet, V.; Jahan, D.; Provost, J.-G.; Landreau, J.; Le Gouezigou, 📂 Article 📅 2004 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 247 KB