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Effects of well number in 1.3-μm GaInAsP/InP GRIN-SCH strained-layer quantum-well lasers

✍ Scribed by Namegaya, T.; Matsumoto, N.; Yamanaka, N.; Iwai, N.; Nakayama, H.; Kasukawa, A.

No coin nor oath required. For personal study only.

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