𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Modeling and Analysis of the Nonrectangular Gate Effect for Postlithography Circuit Simulation

✍ Scribed by Singal, R.; Balijepalli, A.; Subramaniam, A.; Chi-Chao Wang; Liu, F.; Nassif, S.R.; Yu Cao

Book ID
118159775
Publisher
IEEE
Year
2010
Tongue
English
Weight
345 KB
Volume
18
Category
Article
ISSN
1063-8210

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Implementation of the symmetric doped do
Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation
✍ JoaquΓ­n Alvarado; Benjamin IΓ±iguez; Magali Estrada; Denis Flandre; Antonio Cerde πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 374 KB

## Abstract Recently we developed a model for symmetric double‐gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1Γ—10^14^ to 3Γ—10^18^ cm^βˆ’3^. The model covers a wide range of technological parameters and includes short channe