A great many studies on the thermal oxidation of silicon substrates have been carried out owing to its industrial importance. In this paper, the conventional studies are overviewed from the point of view of the diffusion of oxygen. First, the mechanism for dry oxidation of silicon has been discusse
✦ LIBER ✦
Model of thermal oxidation of silicon with diffusion coefficient relaxation
✍ Scribed by O. V. Aleksandrov; A. I. Dus’
- Book ID
- 111444810
- Publisher
- Springer
- Year
- 2010
- Tongue
- English
- Weight
- 217 KB
- Volume
- 44
- Category
- Article
- ISSN
- 1063-7826
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