Model for the Formation of Silicon Carbide from the Pyrolysis of Dichlorodimethylsilane in Hydrogen: II, Silicon Carbide Formation from Silicon and Methane
β Scribed by Domenick E. Cagliostro; Salvatore R. Riccitiello
- Book ID
- 110826112
- Publisher
- John Wiley and Sons
- Year
- 1993
- Tongue
- English
- Weight
- 396 KB
- Volume
- 76
- Category
- Article
- ISSN
- 0002-7820
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The formation of thin silicon carbide films for various uses is of technological intercst but still presents some problems. In many cases. the film produced has an cxccss or deficiency of carbon or silicon.[lJ One reason for this is that the precursor gas generally used is a mixture of several compo
A comprehensive experimental investigation of the effects of hydrogen chloride concentration on the deposition rate and stoichiometry of SiC films produced through thermal decomposition of methyltrichlorosilane (MTS, CH 3 SiCl 3 ) is carried out in a gravimetric hot wall reactor of tubular geometry.