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Model for the barrier diffusion into Cu interconnects at high temperatures

โœ Scribed by Oliver Aubel; Wolfgang Hasse; Martina Hommel; Heinrich Koerner


Book ID
108207512
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
259 KB
Volume
82
Category
Article
ISSN
0167-9317

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Ultra thin diffusion barriers for Cu int
โœ F. Braud; J. Torres; J. Palleeau; J.L. Mermet; C. Marcadal; E. Richard ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 410 KB

The reliability of copper interconnection depends on the barrier effectiveness of conductive or non-conductive layers to block any copper motion. The conductive barrier materials currently used in AI-based interconnections -Ti, TiN, W and nitrided W -have been investigated as barrier against copper