MOCVD of Al2O3 Films Using New Dialkylaluminum Acetylacetonate Precursors: Growth Kinetics and Process Yields

✍ Scribed by G. A. Battiston; G. Carta; G. Cavinato; R. Gerbasi; M. Porchia; G. Rossetto

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 418 KB
• Volume: 7
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/1521-3862(200103)7:2<69::aid-cvde69>3.0.co;2-q

✦ Synopsis

Dimethyl, diethyl, and di-iso-butyl aluminum acetylacetonate compounds were synthesized to deposit Al 2 O 3 thin films by lowpressure metal±organic (LP-MO)CVD. Alumina films were grown in the temperature range 400±520 C under an oxygen or water vapor atmosphere. A kinetic model was applied to analyze the experimental data and to compare the properties of the three precursors. The model, supported by in-line Fourier transform infrared (FTIR) measurements, clearly distinguished the rate-determining steps of the heterogeneous process, with kinetic constants correlated to the molecular structure of the precursors. A method of optimizing deposition conditions, on the basis of the uniformity of the obtained thin films, is discussed.