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MOCVD growth of TiO2 thin films on single crystal GaAs substrates

✍ Scribed by M.C. Marco de Lucas; F. Fabreguette; S. Collin; S. Bourgeois

Book ID
117780768
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
642 KB
Volume
2
Category
Article
ISSN
1466-6049

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A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87