Mixing Mechanism of h-GaN in c-GaN Growth on GaAs (001) Substrates
β Scribed by Hashimoto, A. ;Wada, H. ;Ueda, T. ;Nishio, Y. ;Masuda, A. ;Yamamoto, A.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 225 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE Y. Taniyasu 1 ) (a), Y. Watanabe (a), D. H. Lim (a), A. W. Jia (a), M. Shimotomai (a), Y. Kato (a), M. Kobayashi (a), A. Yoshikawa (a), and K. Takahashi (b)
A theoretical model developed to account for the (001) GaN growth by hydride vapour phase epitaxy in H 2 or neutral carrier gases is applied to investigate the variation of the growth rate with the temperature and input partial pressure of GaCl. The curves computed by taking into account the mass tr