Laterally Overgrown GaN on Patterned GaAs (001) Substrates by MOVPE
โ Scribed by Sanorpim, S. ;Takuma, E. ;Onabe, K. ;Ichinose, H. ;Shiraki, Y.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 309 KB
- Volume
- 192
- Category
- Article
- ISSN
- 0031-8965
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Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE Y. Taniyasu 1 ) (a), Y. Watanabe (a), D. H. Lim (a), A. W. Jia (a), M. Shimotomai (a), Y. Kato (a), M. Kobayashi (a), A. Yoshikawa (a), and K. Takahashi (b)
Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl