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Minority electron mobility in a p-n GaN photodetector

✍ Scribed by Guan, Z P; Li, J Z; Zhang, G Y; Jin, S X; Ding, X M

Book ID
120353523
Publisher
Institute of Physics
Year
2000
Tongue
English
Weight
111 KB
Volume
15
Category
Article
ISSN
0268-1242

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## Abstract N‐face AlGaN (cap)/GaN (channel)/AlGaN (barrier)/GaN (buffer) high electron mobility transistors (HEMTs) provide a simple solution for strong confinement of the two‐dimensional electron gas (2DEG) from the back since carriers are induced on top of the AlGaN barrier. To reduce the advers