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Minority carrier lifetime in doped and undoped epitaxially grown n-type CdxHg1−xTe

✍ Scribed by S. Barton; D. Dutton; P. Capper; C. L. Jones; N. Metcalfe

Book ID
112824049
Publisher
Springer US
Year
1995
Tongue
English
Weight
473 KB
Volume
24
Category
Article
ISSN
0361-5235

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## Abstract Transparent and conductive ZnO:Ga thin films are prepared by laser molecular‐beam epitaxy. Their electron properties were investigated by the temperature‐dependent Hall‐effect technique. The 300‐K carrier concentration and mobility were about __n~s~__ ∼ 10^16^ cm^–3^ and 440 cm^2^/V s,