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Peculiarities of Minority Carrier Lifetime Variations in p-n-p-n Structures Fabricated upon Neutron-Transmutation Doped Silicon and Irradiated by Fast Electrons

✍ Scribed by Korshunov, F. P. ;Marchenko, I. G. ;Troshchinskii, V. T.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
179 KB
Volume
98
Category
Article
ISSN
0031-8965

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