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Minority carrier lifetime and diffusion length in Si1−x−yGexCy and Si1−yCy heterolayers

✍ Scribed by S.K Samanta; G.K Dalapati; S Chatterjee; C.K Maiti

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
122 KB
Volume
224
Category
Article
ISSN
0169-4332

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We investigate copper diffusion in Si-rich Si Ge C (x,20%) and Ge-rich (x593%) Si Ge layers. 12x 2y x y 12x x The profiles of the different constituents (Si, Ge, Cu, C, B) were determined using secondary ion mass spectroscopy (SIMS). Carrier profiles were studied by electrical characterizations o