๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Minority Carrier Diffusion Length Mapping in Silicon Wafers Using a Si-Electrolyte-Contact

โœ Scribed by Lehmann, V.


Book ID
118119528
Publisher
The Electrochemical Society
Year
1988
Tongue
English
Weight
738 KB
Volume
135
Category
Article
ISSN
0013-4651

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Influence of surface treatment on electr
โœ A. Voigt; H.P. Strunk ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 545 KB

Polishing experiments show that chemomechanical treatment of multicrystalline silicon may cause electrical activation of dislocations, visible in electron-beam-induced current images. Mechanical polishing with A1203 in distilled water has no adverse effect. However, when traces of copper are added,