Microwave circuit modeling for semiconductor lasers under large and small signal conditions
β Scribed by H. Elkadi; J. P. Vilcot; S. Maricot; D. Decoster
- Book ID
- 112145507
- Publisher
- John Wiley and Sons
- Year
- 1990
- Tongue
- English
- Weight
- 350 KB
- Volume
- 3
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
This article presents the results of research on the large-signal dynamic behavior (pulsed I/V curves) of PHEMT devices, in the overall I/V plane, when the incident optical-input-power level is changed. A complete bias and the optical-power dependency of the parameters used in the large-signal model
The laser diode nonlinear equivalent circuit model is developed to be integrated as part of a microwave computer-aided design (CAD) software. Single-mode rate equations are numerically solved using a harmonic balance (HB) simulator to predict performance of laser diodes. The laser diode physical par
rower than the achieved ; 25% impedance bandwidth. According to the measurements, good dual linear polarization characteristics can be realized between the two resonance frequencies.