Large-signal model for microwave FETs under CW laser stimulation

✍ Scribed by J. M. Zamanillo; C. Navarro; C. Pérez-Vega; A. Mediavilla

• Book ID: 102947267
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 719 KB
• Volume: 16
• Category: Article
• ISSN: 1096-4290
• DOI: 10.1002/mmce.20134

✦ Synopsis

This article presents the results of research on the large-signal dynamic behavior (pulsed I/V curves) of PHEMT devices, in the overall I/V plane, when the incident optical-input-power level is changed. A complete bias and the optical-power dependency of the parameters used in the large-signal model for a PHEMT device are determined from the experimental scattering parameters and the DC and pulsed measurements. All the derivatives of the model shown here are continuous in order to provide a realistic description of the circuit distortion and intermodulation phenomena. The model is also valid for GaAs MESFETs. The results obtained for the model exhibit very good agreement with the measurements.