Microwave annealing enhances Al-induced lateral crystallization of amorphous silicon thin films
β Scribed by R. Rao; G.C. Sun
- Book ID
- 108165908
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 356 KB
- Volume
- 273
- Category
- Article
- ISSN
- 0022-0248
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π SIMILAR VOLUMES
Microwave heating was utilized for low-temperature crystallization of amorphous Si (a-Si) films. Microwave heating lowered the annealing temperature and reduced the annealing time. By microwave heating the hydrogen in the amorphous films was diffused out long before the nucleation of polycrystalline
## Abstract We study the influence of highβtemperature annealing (1100β1200 Β°C) on the crystallization of nitrogenβdoped silicon films deposited by LPCVD (lowβpressure chemical vapor deposition) at low temperature (465 Β°C) from disilane Si~2~H~6~ and ammonia NH~3~. Scanning electron microscopy (SEM