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Microwave annealing enhances Al-induced lateral crystallization of amorphous silicon thin films

✍ Scribed by R. Rao; G.C. Sun


Book ID
108165908
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
356 KB
Volume
273
Category
Article
ISSN
0022-0248

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Microwave-induced low-temperature crysta
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Microwave heating was utilized for low-temperature crystallization of amorphous Si (a-Si) films. Microwave heating lowered the annealing temperature and reduced the annealing time. By microwave heating the hydrogen in the amorphous films was diffused out long before the nucleation of polycrystalline

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## Abstract We study the influence of high‐temperature annealing (1100–1200 Β°C) on the crystallization of nitrogen‐doped silicon films deposited by LPCVD (low‐pressure chemical vapor deposition) at low temperature (465 Β°C) from disilane Si~2~H~6~ and ammonia NH~3~. Scanning electron microscopy (SEM