Microstructure and Electrical Properties of Indium Oxide Thin Films Prepared by Direct Oxygen Ion-Assisted Deposition
โ Scribed by Cho, Jun-Sik; Koh, Seok-Keun; Yoon, Ki Hyun
- Book ID
- 123607906
- Publisher
- The Electrochemical Society
- Year
- 2000
- Tongue
- English
- Weight
- 581 KB
- Volume
- 147
- Category
- Article
- ISSN
- 0013-4651
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๐ SIMILAR VOLUMES
Y 2 O 3 thin films were deposited by ion beam assisted deposition (IBAD) and the effects of fabrication parameters such as substrate temperature and ion energy on the structure, optical and electrical properties of the films were investigated. The results show that the deposited Y 2 O 3 films had le
## Abstract Indium tin oxide (ITO) films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique (IBAD) at different ion beam currents (80โ120 mA). The effect of the ion beam current on films properties has been studied. The films prepared at low ion
Indium tin oxide (ITO) films were produced by low-energy oxygen ion beam assisted electron-beam evaporation. The dependence of surface morphology, electrical and optical properties on evaporation rate, oxygen ion beam energy and density, as well as substrate temperatures was characterized by atomic