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Microstructural changes in silicon induced by patterning with focused ion beams of Ga, Si and Au

✍ Scribed by Chee, See Wee; Kammler, Martin; Balasubramanian, Prabhu; Reuter, Mark C.; Hull, Robert; Ross, Frances M.


Book ID
121467623
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
889 KB
Volume
127
Category
Article
ISSN
0304-3991

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## Abstract Strain analysis of a laterally patterned Si‐wafer was carried out utilizing X‐ray grazing‐incidence diffraction with synchrotron radiation. The lateral patterning was done by focused ion beam implantation using an ion source of liquid AuGeSi alloy. Samples were prepared by either 35 keV