## Abstract Air‐filled patch antennas for millimeter‐wave (mm‐wave) applications are demonstrated using silicon‐based micromachining techniques. The antennas are fed by rectangular coaxial lines and made of five gold plated layers bonded together. Each layer is made by deep reactive etching on sili
Micromachined membrane filters for microwave and millimeter-wave applications (invited article)
✍ Scribed by Rebeiz, Gabriel M. ;Katehi, Linda P. B. ;Weller, Thomas M. ;Chi, Chen-Yu ;Robertson, Stephen V.
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 481 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1050-1827
No coin nor oath required. For personal study only.
✦ Synopsis
Recent developments in micromachining techniques at the University of Michigan have resulted in novel high-performance low-loss filters for microwave and millimeter-wave applications. The idea is based on suspending the filters on thin dielectric membranes to eliminate dielectric loss and dispersion problems, resulting in a pure TEM mode of propagation and conductor-loss-limited performance. The dielectric membrane and the surrounding cavities are built using chemical etching in Silicon and GaAs wafers. The filters are therefore compatible with low-cost IC fabrication techniques and can be combined with planar diodes and transistors to result in active filter networks. Several state-of-the-art filters have been realized including 15-GHz and 20-GHz bandpass interdigital suspended stripline filters, lowpass and bandpass microshield filters at 30 GHz and 90 GHz, microstrip 94-GHz bandpass filters, and a 250-GHz bandpass filter with 1.0-1.5-dB insertion loss. This article reviews the associated fabrication techniques, the different types of transmission lines achieved using this technology, and the measured performance from 15 to 350 GHz. The study concludes with a detailed description of the future work in this area.
📜 SIMILAR VOLUMES
## Abstract Simple closed‐form expressions for the analysis of broadside coupled suspended substrate stripline is presented. The expressions are valid over a wide range of structural parameters and dielectric constants. The validity range of this expression for structural parameters is 1.0 ≤ ε~__r_
An analytical model for two-dimensional electron gas ( ) 2-DEG for a pseudomorphic Al Ga As r In Ga As modulaz 1 y z y 1 y y tion-doped field-effect transistor is de¨eloped. The 2-DEG density is calculated as a function of de¨ice dimensions and doping density. A simple analytical expression is estab
ᎏdynamic, DC, and OIL chirp. By numerically analyzing the rate equations for the injection-locked laser, it is shown that the OIL chirp is compatible to the DC and dynamic chirp, but different in sign. Hence, a considerable reduction in frequency chirp can be achieved by the OIL. REFERENCES 1. C. Li