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Microhardness and microstructure of ion-beam-sputtered, nitrogen-doped NiFe films

โœ Scribed by T.W. Wu; C. Hwang; J. Lo; P. Alexopoulos

Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
665 KB
Volume
166
Category
Article
ISSN
0040-6090

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Aluminum nitride (AlN) films, using a dual ion beam sputtering, were prepared over the argon ion beam voltage ranging from 800 to 1200 V at room temperature. The AlN films were (0 0 2) and (1 0 0) planes. Excepting for operating at 1000 V, the AlN films exhibited the (0 0 2) preferred orientation. T