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Microcrystalline silicon with high electron field-effect mobility deposited at 230°C

✍ Scribed by M Mulato; Y Chen; S Wagner; A.R Zanatta

Book ID: 117150460
Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 139 KB
Volume: 266-269
Category: Article
ISSN: 0022-3093
DOI: 10.1016/s0022-3093(99)00934-5

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