C60 thin-film transistors with high field-effect mobility, fabricated by molecular beam deposition

✍ Scribed by S. Kobayashi; T. Takenobu; S. Mori; A. Fujiwara; Y. Iwasa

• Publisher: Institute of Physics and National Institute of Materials Science
• Year: 2003
• Tongue: English
• Weight: 233 KB
• Volume: 4
• Category: Article
• ISSN: 1468-6996
• DOI: 10.1016/s1468-6996(03)00064-0

✦ Synopsis

We report performance of C 60 thin-film field-effect transistors and characterizations of C 60 thin-films on SiO 2 substrates fabricated by molecular beam deposition. Devices, fabricated and characterized under high vacuum without exposing to air, routinely showed current on/off ratios .10 8 and field-effect mobility in the range of 0.5-0.3 cm 2 /V s. The obtained mobility is comparable to the highest value among n-type organic thin-film transistors and close to that derived from the photocurrent measurements on C 60 thin-films. The grain size of C 60 thin-film, condensed in an fcc solid, increases with the substrate temperature, while the mobility did not exhibit a clear relation with substrate temperature.