𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Microcomposition and Luminescence of InGaN Emitters

✍ Scribed by Martin, R.W. ;Edwards, P.R. ;O'Donnell, K.P. ;Mackay, E.G. ;Watson, I.M.


Book ID
101379700
Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
172 KB
Volume
192
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Localized luminescence centers of InGaN
✍ Kanie, H; Tsukamoto, N; Koami, H; Kawano, T; Totsuka, T πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 123 KB
Origin of Luminescence from InGaN Diodes
✍ O'Donnell, K.; Martin, R.; Middleton, P. πŸ“‚ Article πŸ“… 1999 πŸ› The American Physical Society 🌐 English βš– 92 KB
Intrinsic Infrared Luminescence from InG
✍ K.P. O'Donnell; R.W. Martin; S. Pereira; A. Bangura; M.E. White; W. van der Stri πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 125 KB
Crack-Free InGaN/GaN Light Emitters on S
✍ Dadgar, A. ;Alam, A. ;Riemann, T. ;BlοΏ½sing, J. ;Diez, A. ;Poschenrieder, M. ;Str πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 1014 KB

We present MOCVD-grown crack-free GaN based light emitters on Si with a layer thickness of 3.6 mm. The crack free layer is grown on a thin predeposited GaN layer with fields defined by a Si x N y mask. In X-ray diffraction measurements a reduction in stress is observed for the patterned sample as co