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Metastable defect states and equilibration temperatures in a-SiNx:H, a-SiOx:H and a-SiCx:H

✍ Scribed by A. Hamed; H. Fritzsche; X.-M. Deng; S. Köhler; R. Gupta


Book ID
117146990
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
279 KB
Volume
137-138
Category
Article
ISSN
0022-3093

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Induced defects in a-Si:H/a-SiNx:H multi
✍ W.Z. Gu; Z.C. Wang; M.X. Sun 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 125 KB

The induced defects and their distribution in a-Si:H/a-SiN x :H multilayers are determined using an electromagnetic technique (EMT) and positron annihilation technique (PAT). It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are a