Metal–insulator transition of VO[sub 2] thin films grown on TiO[sub 2] (001) and (110) substrates

✍ Scribed by Muraoka, Y.; Hiroi, Z.

• Book ID: 120436702
• Publisher: American Institute of Physics
• Year: 2002
• Tongue: English
• Weight: 446 KB
• Volume: 80
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1446215

✦ Synopsis

The effect of uniaxial stress along the c axis on the metal–insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.