Metalâinsulator transition of VO[sub 2
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Muraoka, Y.; Hiroi, Z.
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Article
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2002
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American Institute of Physics
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English
⚖ 446 KB
The effect of uniaxial stress along the c axis on the metal–insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the