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Metalorganic vapour phase epitaxy of GaN and GaInN/GaN heterostructures and quantum wells

โœ Scribed by F. Scholz


Book ID
104365153
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
1002 KB
Volume
35
Category
Article
ISSN
0960-8974

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Conventional metalorganic vapour phase epitaxy (MOVPE) has been very successful in providing high quality GaN films, however, the growth takes place at high temperature and thus requires large flow rates of high purity ammonia. In order to avoid such high and costly use of ammonia, we have developed