Low-temperature metalorganic chemical va
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Shinji Fujieda; Masashi Mizuta; Yoshishige Matsumoto
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Article
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1996
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John Wiley and Sons
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English
β 559 KB
Aluminium nitride (AIN) thin films have been grown by low-temperature metalorganic chemical vapour deposition (MOCVD) to passivate GaAs. By utilizing hydrazine (N2H4), highly resistive amorphous-like AIN films were obtained at growth temperatures around 400 "C. At the AIN-GaAs interface, three deep