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Metalorganic chemical vapour deposition of junction isolated GaAlAs/GaAs LED structures

✍ Scribed by R.R. Bradley; R.M. Ash; N.W. Forbes; R.J.M. Griffiths; D.P. Jebb; H.E. Shephard


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
654 KB
Volume
77
Category
Article
ISSN
0022-0248

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Low-temperature metalorganic chemical va
✍ Shinji Fujieda; Masashi Mizuta; Yoshishige Matsumoto πŸ“‚ Article πŸ“… 1996 πŸ› John Wiley and Sons 🌐 English βš– 559 KB

Aluminium nitride (AIN) thin films have been grown by low-temperature metalorganic chemical vapour deposition (MOCVD) to passivate GaAs. By utilizing hydrazine (N2H4), highly resistive amorphous-like AIN films were obtained at growth temperatures around 400 "C. At the AIN-GaAs interface, three deep