✦ LIBER ✦

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

✍ Scribed by Dadgar, Armin; Bläsing, Jürgen; Diez, Annette; Alam, Assadullah; Heuken, Michael; Krost, Alois

Book ID: 127371117
Publisher: Institute of Pure and Applied Physics
Year: 2000
Tongue: English
Weight: 708 KB
Volume: 39
Category: Article
ISSN: 0021-4922
DOI: 10.1143/jjap.39.l1183

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Crack-Free Thick GaN Layers on Silicon (

Crack-Free Thick GaN Layers on Silicon (111) by Metalorganic Vapor Phase Epitaxy

✍ Feltin, E. ;Beaumont, B. ;La�gt, M. ;de Mierry, P. ;Venn�gu�s, P. ;Leroux, M. ;G 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 148 KB 👁 2 views

Metalorganic chemical vapor phase epitax

Metalorganic chemical vapor phase epitaxy and structural properties of Ga1-xPxN on GaN/Si(111) substrates

✍ K. Fehse; A. Dadgar; P. Veit; J. Bläsing; A. Krost 📂 Article 📅 2005 🏛 Springer 🌐 English ⚖ 481 KB

Growth of 2 μm Crack-Free GaN on Si(111)

Growth of 2 μm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition

✍ Wei, Meng; Wang, Xiao-Liang; Xiao, Hong-Ling; Wang, Cui-Mei; Pan, Xu; Hou, Qi-Fe 📂 Article 📅 2011 🏛 Institute of Physics 🌐 English ⚖ 653 KB

Investigation of defect structures in In

Investigation of defect structures in InGaN/GaN multiple quantum wells grown on Si(1 1 1) substrate by metalorganic vapor phase epitaxy

✍ G.M. Wu; Y.L. Kao 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 504 KB