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Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties

โœ Scribed by Q. Gao; H.H. Tan; C. Jagadish; B.Q. Sun; M. Gal; L. Ouyang; J. Zou


Book ID
108165710
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
341 KB
Volume
264
Category
Article
ISSN
0022-0248

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Microstructures of AlGaN/AlN/Si (111) Gr
โœ Xi, Dongjuan ;Zheng, Youdou ;Chen, Peng ;Zhao, Zuoming ;Chen, Ping ;Xie, Shiyong ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 101 KB ๐Ÿ‘ 2 views

In this paper the X-ray photoelectron spectrum and the Auger electron spectrum were used to study the microstructures of AlGaN/AlN/Si (111) grown by metal organic chemical vapor deposition. The results indicated that a broad transition region, about 20 nm, was present at the interface of AlN/Si and