## Abstract We report on the growth of unidirectional InN micropyramids by using a simple patternβfree epitaxial technique. These pyramids were grown on a GaN layer deposited on sapphire via metalorganic chemical vapor deposition (MOCVD). The XRD full width at half maximum (FWHM) was observed to be
β¦ LIBER β¦
Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition
β Scribed by H. Hartono; P. Chen; S.J. Chua; E.A. Fitzgerald
- Book ID
- 108289444
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 932 KB
- Volume
- 515
- Category
- Article
- ISSN
- 0040-6090
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