Sb antisite defects in InSb epilayers pr
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Y.J. Jin; D.H. Zhang; X.Z. Chen; X.H. Tang
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Article
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2011
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Elsevier Science
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English
β 263 KB
High quality InSb epilayers were grown epitaxially on InSb (1 0 0) by metalorganic chemical vapor deposition. Different growth temperatures and V/III ratios were employed in the growth and their effects on the quality of the grown films were studied. Low temperature photoluminescence spectra of the