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Metal–insulator transitions due to shallow donors in a GaAs/AlGaAs quantum well

✍ Scribed by A. John Peter


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
264 KB
Volume
42
Category
Article
ISSN
1386-9477

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✍ J.H. Park; S. Senzaki; N. Mori; C. Hamaguchi 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 117 KB

Time-resolved photoluminescence measurements in δ-doped GaAs/AlGaAs on the quantum well structures are performed to study effects of ionized impurities relaxation process of photoexcited carriers. It is theoretically shown that a thin quantum well with a δ-doping layer inserted in the barrier layer