We present a systematic study of the magnetic field induced metal-insulator transition in quasi-three-dimensional wide quantum wells by numerical calculations. Depending on carrier density and carrier mobility we observe both a change from metal to insulator-like temperature dependence as well as a
Metal insulator transition due to surface roughness scattering in a quantum well
✍ Scribed by A. Gold
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 293 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0038-1098
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The positively and negatively charged excitons, X + and X -, respectively, are identified by their magnetic circular dichroism in the absorption spectra of modulationdoped CdTe/Cd 0.69 Mg 0.23 Zn 0.08 Te multiple quantum wells at small carrier densities (≈ 10 10 cm -2 ). In these quantum wells with
The temperature dependence of the resistivity of gated Si-SiGe quantum-well structures has revealed a metal-insulator transition as a function of carrier density at zero magnetic field. Although early scaling theories have argued against the existence of a metal-insulator transition at zero temperat