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Metal-insulator transition in a two-layer electron-hole system

✍ Scribed by Yu. E. Lozovik; O. L. Berman


Book ID
110118199
Publisher
SP MAIK Nauka/Interperiodica
Year
1997
Tongue
English
Weight
88 KB
Volume
39
Category
Article
ISSN
1063-7834

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Studies of the temperature dependence of the conductivity on large number of Si-MOS samples with di erent disorder give evidence for the lack of a universal one-parameter scaling. We demonstrate that the 2D metallic state survives over a wide range of temperatures from 16 mK to 8 K, carrier densitie