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Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors

✍ Scribed by N. R. Aghamalyan, T. A. Aslanyan, E. S. Vardanyan, Y. A. Kafadaryan, R. K. Hovsepyan, S. I. Petrosyan, A. R. Poghosyan

Book ID
119932696
Publisher
Allerton Press, Inc.
Year
2012
Tongue
English
Weight
239 KB
Volume
47
Category
Article
ISSN
1068-3372

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## Abstract We show for __n__ ‐type semiconductors, using Ge:As and 4__H__ ‐SiC:N as examples, that the spin density measured by electron spin resonance (ESR) falls sharply near the insulator–metal (IM) transition. Two reasons might be responsible for this phenomenon: potential fluctuations with co