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Metal-insulator transition; nucleation of a conducting phase in amorphous semiconductors

✍ Scribed by B.K. Chakraverty


Book ID
118919039
Publisher
Elsevier Science
Year
1970
Tongue
English
Weight
377 KB
Volume
3
Category
Article
ISSN
0022-3093

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Antiferromagnetic phase in doped semicon
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## Abstract We show for __n__ ‐type semiconductors, using Ge:As and 4__H__ ‐SiC:N as examples, that the spin density measured by electron spin resonance (ESR) falls sharply near the insulator–metal (IM) transition. Two reasons might be responsible for this phenomenon: potential fluctuations with co