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Mechanisms of void formation in Ge implanted SiO2 films

✍ Scribed by E.S. Marstein; A.E. Gunnæs; U. Serincan; S. Jørgensen; A. Olsen; R. Turan; T.G. Finstad

Book ID
118564442
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
389 KB
Volume
207
Category
Article
ISSN
0168-583X

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Thermally grown, 200 nm thick layers of SiO 2 were double implanted with Ge + and Sn + ions in turn and the resulting SiO 2 (Ge+Sn)/ Si structures were annealed at 400-900°C for 30 min. Using transmission electron microscopy (TEM) and electron diffraction (TED), clear evidence is found that the laye