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Mechanisms of Heterogeneous Processes in the System SiO2+ CH4: III. Products of >Si

✍ Scribed by D.G. Permenov; V.A. Radzig


Book ID
111597194
Publisher
Springer
Year
2004
Tongue
English
Weight
61 KB
Volume
45
Category
Article
ISSN
0023-1584

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SiO2/Si selectivity in high density CHF3
✍ L. Rolland; M.C. Peignon; Ch. Cardinaud; G. Turban πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 351 KB

A new high density plasma SiO2 etching process based on CHF3/CH4 mixture is investigated by means of plasma diagnostics and surface analysis. Selectivity as high as 15 with respect to silicon has been obtained. Besides, a slight decrease of the SiO2 etch rate is observed as compared to CHF3. Deposit