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Investigation of the strain relaxation mechanism in the Si–SiO2 system during the process of its formation

✍ Scribed by Kropman, D. ;Poll, V. ;Kärner, T. ;Ugaste, Ü. ;Mellikov, E. ;Abru, U. ;Paomets, V.


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
143 KB
Volume
198
Category
Article
ISSN
0031-8965

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Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp