✦ LIBER ✦

Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties

✍ Scribed by D. Kropman; E. Mellikov; A. Öpik; K. Lott; O. Volobueva; T. Kärner; I. Heinmaa; T. Laas; A. Medvid

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Investigation of the strain relaxation m

✍ Kropman, D. ;Poll, V. ;Kärner, T. ;Ugaste, Ü. ;Mellikov, E. ;Abru, U. ;Paomets, 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 143 KB

Electrical properties of the Si-SiO2 int

📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 100 KB

Interface states and interface disorder

✍ Akos G. Revesz; Karl H. Zaininger; Russell J. Evans 📂 Article 📅 1967 🏛 Elsevier Science 🌐 English ⚖ 657 KB

Interface states and interface disorder

✍ AkosG. Revesz; KarlH. Zaininger; RussellJ. Evans 📂 Article 📅 1966 🏛 Elsevier Science 🌐 English ⚖ 195 KB

Formation of SiO at Si/SiO2 interface an

✍ G.K. Celler; L.E. Trimble 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 676 KB

The influence of the negative bias-tempe

✍ Marczewski, J. ;Nitecki, R. ;Liberadzka, M. 📂 Article 📅 1982 🏛 John Wiley and Sons 🌐 English ⚖ 458 KB