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Mechanism of microcrystalline silicon growth from silicon tetrafluoride and hydrogen

✍ Scribed by Y. Okada; J. Chen; I.H. Campbell; P.M. Fauchet; S. Wagner


Book ID
115987189
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
196 KB
Volume
114
Category
Article
ISSN
0022-3093

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## Abstract The process of plasma chemical deposition of silicon from inductively coupled plasma of the mixture of high‐purity SiF~4~ and H~2~ sustained by RF discharge at 13.56 MHz in amount sufficient for subsequent growth of crystal by Czochralski method was investigated. The structure and impur