Mechanism of metal-carbenoid insertion into the SiH bond

✍ Scribed by Yannick Landais; Liliana Parra-Rapado; Denis Planchenault; Valéry Weber

• Publisher: Elsevier Science
• Year: 1997
• Tongue: French
• Weight: 286 KB
• Volume: 38
• Category: Article
• ISSN: 0040-4039
• DOI: 10.1016/s0040-4039(96)02285-x

✦ Synopsis

Kinetic investigations on the insertion of metal-carbenoid intermediates into the Si-H bond have been carried out. A kinetic isotope effect of 1.5 was found and the plot of log kx/krt vs cr for the reaction of arylsilanes with EDA, gave a straight line with p =-0.31. It was thus concluded that the insertion proceeds through a concerted pathway with development of a small positive charge at the silicon centre and a relatively early transition state.