## Abstract The kinetics of growth of the open circuit insulating oxide films on Hf, Ta, Nb, Zr and Al were studies in many salt solutions using potential and capacitance measurements. The effect of salt type and concentration, oxygen concentration, temperature and surface pretreatment on the growt
Mechanism of ion transport through anodic oxide film on valve metals
โ Scribed by R.K. Nigam; R.S. Chaudhary
- Publisher
- Elsevier Science
- Year
- 1971
- Tongue
- English
- Weight
- 497 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0013-4686
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
The temperature distribution alongthe vertical pores of the anodicoxide films onalumhrium was calculated for usual conditions of anodizing in 10% sulphuric acid solution by taking into account the accumulation of both Joule heat and the heat of formation of oxide at the pore-base and the outward con
The potentlostatlc anodlc oxide growth on Al, Nb, Ta and TI shows deviations from the high field model, eg an overshootmg current The formation of mobile lomc space charges by an emlsslon of anions and cations from the interfaces explams the shape of the transients, the coupling of amon and cation m
Metallized polymeric ยฎlms are amongst the most favoured candidates for replacing aluminum foil-based multilayer ยฎlms. The main advantages in using the former instead of the latter are: weight saving of about 40%; much less aluminum (320 time less in weight); improved recyclability; and the possibili