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Mechanism of growth of ultrathin SiO2 layers on silicide substrates

โœ Scribed by A. Cros


Book ID
118986613
Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
227 KB
Volume
162
Category
Article
ISSN
0039-6028

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Growth of manganese silicide layers on S
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## Abstract Manganese silicide layers were grown on Si(111) substrates by exposure of the Si substrates to MnCl~2~ vapor. The thermal treatment temperature of 500 ยฐC provided the appropriate growth conditions to form the Mn__~x~__ Si__~y~__ (__y__ /__x__ โˆผ 2) similar to MnSi~1.7~ phase. The epitaxi