Growth of manganese silicide layers on Si substrates using MnCl2source

✍ Scribed by Junhua, Hu ;Kurokawa, Takanori ;Suemasu, Takashi ;Takahara, Shogo ;Itakura, Masaru ;Tatsuoka, Hirokazu

• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 379 KB
• Volume: 206
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200824246

✦ Synopsis

Abstract

Manganese silicide layers were grown on Si(111) substrates by exposure of the Si substrates to MnCl~2~ vapor. The thermal treatment temperature of 500 °C provided the appropriate growth conditions to form the Mn__~x~__ Si__~y~__ (y /x ∼ 2) similar to MnSi~1.7~ phase. The epitaxial Mn__~x~__ Si__~y~__ (y /x ∼ 2) islands grew during the initial growth stage. As the heat treatment time increased, the epitaxial layer became continuous and covered the entire Si(111) substrate surface at the appropriate heat treatment temperature of 500 °C, even though the additional growth of the Mn__~x~__ Si__~y~__ (y /x ∼ 1) deposit similar to MnSi phase occurred when the thickness of Mn‐silicide layers exceeded the limited layer thickness. These results encouraged us to grow large area Mn__~x~__ Si__~y~__ (y /x ∼ 2) layers on Si substrates using this simple growth technique. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)