Epitaxial growth of platinum silicide layers on (111) Si substrates
β Scribed by Jiann-Ruey Chen; Tian-Shyng Heh; Ming-Pang Lin
- Book ID
- 118986607
- Publisher
- Elsevier Science
- Year
- 1985
- Tongue
- English
- Weight
- 303 KB
- Volume
- 162
- Category
- Article
- ISSN
- 0039-6028
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π SIMILAR VOLUMES
## Abstract Manganese silicide layers were grown on Si(111) substrates by exposure of the Si substrates to MnCl~2~ vapor. The thermal treatment temperature of 500 Β°C provided the appropriate growth conditions to form the Mn__~x~__ Si__~y~__ (__y__ /__x__ βΌ 2) similar to MnSi~1.7~ phase. The epitaxi
Molecular beam epitaxy was used to grow MnF 2 films on a Si(111) substrate with a thin CaF 2 buffer at room temperature. It was found that films thinner than three molecular layers have a cubic fluorite crystal structure inherited from CaF 2 . The MnF 2 film is coherent to the substrate and has an i