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Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode

✍ Scribed by V. I. Gaman; V. I. Balyuba; V. Yu. Gritsyk; T. A. Davydova; V. M. Kalygina

Book ID: 111443992
Publisher: Springer
Year: 2008
Tongue: English
Weight: 198 KB
Volume: 42
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782608030172

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